STF12100

SCHOTTKY RECTIFIER

Features ?150?CTJoperation ?Centertapconfiguration ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?

STF12100C

SCHOTTKY RECTIFIER

Features ?150?CTJoperation ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?TrenchMOSSchottkytechnol

STF-12-91

E-Band Faraday Isolator, 90? Twist Input

Description: ModelSTF-12-91isafullbandFaradayisolatorthatoperatesfrom60to90GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.TheFaradayisolatoroffers28dBnominalisolationand1.5dBty

STF-12-91-C

E-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: ModelSTF-12-91-CisafullbandFaradayisolatorthatoperatesfrom60to90GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.Thecompact,robustpackageisidealforsystemintegrationand

STF-12-91-M2

E-Band, Mini Faraday Isolator, 0.750” Insertion Length, 90° Twist

FEATURES FullBandCoverage LowInsertionLoss HighIsolation CompactFormFactor ResistanttoStrayMagneticFields BacksideFlangeScrewAccess 90DegreeTwist APPLICATIONS TestLab Instrumentations Subassemblies

STF12N120

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.69Ω(Max)@VGS=10V DESCRIPTION ·Switchingapplications.

STF12N50U

Marking：12N50U；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 10 A TO-220FP Ultrafast MESH? Power MOSFET

Features ■100avalanchetested ■Outstandingdv/dtcapability ■Gatechargeminimized ■Verylowintrinsiccapacitance ■VerylowRDS(on) ■Extremelylowtrr Application ■Switchingapplications –HighvoltageinvertersspecificforLCDTV –Lightingfullbridgetopology –Motorcont

STF12N65M5

N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatcheda

STF12NK60Z

N-CHANNEL 600V - 0.53 Ohm - 10A TO-220 / TO-220FP Zener-Protected SuperMESH??OSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialtiesistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplication.Suchserie

STF12NK80Z

Marking：12NK80Z；Package：TO-220FP；N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH? Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

Features ■Extremelyhighdv/dtcapability ■Improvedesdcapability ■100avalanchetested ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Verygoodmanufacturingreliability Applications ■Switchingapplications Description ThesedevicesareN-channelZener-protected Pow