STF1060

SCHOTTKY RECTIFIER

Features ?150'CTJoperation ?Centertapconfiguration ?Ultralowforwardvoltagedrop ?Highpurity,hightemperatureepoxyencapsulationfor enhancedmechanicalstrengthandmoistureresistance ?Highfrequencyoperation ?Guardringforenhancedruggednessandlongtermreliability ?

STF-10-91

W-Band Faraday Isolator, 90? Twist Input

Description: ModelSTF-10-91isafullbandFaradayisolatorthatoperatesfrom75to110GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.TheFaradayisolatoroffers28dBtypicalisolationand1.5dBn

STF-10-91-C

W-Band Full Waveguide Band Compact Faraday Isolator, 90° Twist

Description: ModelSTF-10-91-CisafullbandFaradayisolatorthatoperatesfrom75to110GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.Thecompact,robustpackageisidealforsystemintegrationan

STF-10-91-M2

W-Band, Mini Faraday Isolator, 0.658” Insertion Length, 90° Twist

FEATURES FullBandCoverage LowInsertionLoss HighIsolation CompactFormFactor ResistanttoStrayMagneticFields BacksideFlangeScrewAccess 90DegreeTwist APPLICATIONS TestLab Instrumentations Subassemblies

STF10N105K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=6A@TC=25℃ ·DrainSourceVoltage-VDSS=1050V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF10N65K3

N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STF10N65K3

N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

Description TheseSuperMESH3?PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH?technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,renderi

STF10N80K5

Marking：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 ??typ., 9 A MDmesh??K5 Power MOSFET in a TO-220FP package

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STF10N80K5

Marking：10N80K5；Package：TO-220FP；N-channel 800 V, 0.470 Ω typ., 9 A MDmesh? K5 Power MOSFETs in a TO-220FP and TO-220FP ultra narrow leads

Features ?Industry’slowestRDS(on)xarea ?Industry’sbestfigureofmerit(FoM) ?Ultra-lowgatecharge ?100avalanchetested ?Zener-protected Applications ?Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETsaredesignedusingMDmesh?K5 techno

STF10N95K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.