STF10NK50Z

N-CHANNEL 500V - 0.55??- 9A TO-220 / TO-220FP Zener-Protected SuperMESH MOSFET

DESCRIPTION TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchs

STF10NK50Z

Marking：F10NK50Z；Package：TO-220FP；N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH? Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH?technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH?layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

STF10NK50Z_V01

N-channel 500 V, 0.55 Ω, 9 A Zener-protected SuperMESH? Power MOSFET in TO-220FP package

Description ThisdeviceisanN-channelZener-protected PowerMOSFETdevelopedusing STMicroelectronics’SuperMESH?technology, achievedthroughoptimizationofST’swell establishedstrip-basedPowerMESH?layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesigne

STF10NK60Z

Marking：10NK60Z；Package：TO-220FP；N-channel 600 V, 0.65 Ω, 10 A, SuperMESH? Power MOSFET Zener-protected TO-220FP narrow leads

Features ■Extremelyhighdv/dtcapability ■100avalanchetested ■Gatechargeminimized ■Verygoodmanufacturingreliability Application ■Switchingapplications Description TheSuperMESH?seriesisobtainedthroughan extremeoptimizationofST’swellestablished strip-basedPowe

STF10NM50N

N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STF10NM60N

Marking：10NM60N；Package：TO-220FP；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description ThesedevicesareN-channel600VPowerMOSFETrealizedusingthesecondgenerationofMDmesh?technology.ItappliesthebenefitsofthemultipledrainprocesstoSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproductoffersimprovedon-resistanc

STF10NM60ND

Marking：10NM60ND；Package：TO-220FP；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description ThisFDmesh?IIPowerMOSFETwithintrinsicfast-recoverybodydiodeisproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,thisrevolutionarydevicefeaturesextremelylowonresistanceandsuperiorswitchingperformance.Itis

STF10NM65N

N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesimplementsthesecondgenerationofMDmesh?Technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretotheCompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdema

STF10P6F6

P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications

STF10P6F6

Marking：10P6F6；Package：TO-220FP；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThesedevicesareP-channelPowerMOSFETs developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.